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| 2SD1368 Silicon NPN Epitaxial Application * Low frequency power amplifier * Complementary pair with 2SB1002 Outline 2SD1368 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak)* PC * Tj Tstg 2 1 Ratings 100 50 6 1 1.5 1 150 -55 to +150 Unit V V V A A W C C Notes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm) Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 100 50 6 -- -- 1 Typ -- -- -- -- -- -- -- -- 100 20 Max -- -- -- 0.1 0.1 500 0.3 1.2 -- -- Unit V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 80 V, IE = 0 VEB = 4 V, IC = 0 VCE = 2 V, IC = 0.1 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Mark hFE CA 100 to 200 V(BR)EBO I CBO I EBO hFE* 100 -- -- -- -- CC VCE(sat) VBE(sat) fT Cob V V MHz pF I C = 1 A, IB = 0.1 A, Pulse I C = 1 A, IB = 0.1 A, Pulse VCE = 2 V, IC = 10 mA, Pulse VCB = 10 V, IE = 0, f = 1 MHz 1. The 2SD1368 is grouped by h FE as follows. CB 160 to 320 250 to 500 See characteristic curves of 2SD789. 2 2SD1368 3 2SD1368 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 4 |
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